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| DATA SHEET ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. PACKAGE DIMENSIONS (in millimeter) PACKAGE DIMENSIONS FEATURES * Sharp Breakdown characteristic. * Vz: Applied E24 standard. (in millimeters) 2.50.15 1.70.1 APPLICATIONS Circuit for Constant Voltage, Constant Current, Wave form Clipper, Surge absorber, etc. 0.19 Cathode Indication ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Power Dissipation Forward Current Reverse Surge Power Junction Temperature Storage Temperature P IF PRSM Tj Tstg 200 mW 100 mA 85 W (at t=10 s/1 pulse) Show Fig. 12 150 C -55 to +150 C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11444EJ3V0DS00 (3rd edition) Date Published March 1999 N CP(K) Printed in Japan (c) 0.11 +0.05 -0.01 00.05 0.90.1 0.30.05 1.250.1 ,, ,,,, 1995 RD2.0S to RD120S ELECTRICAL CHARACTERISTICS (TA = 25 2 C) Type Number Class Zener Voltage Vz (V)Note 1 MIN. RD2.0S RD2.2S RD2.4S RD2.7S B B B B B1 B2 RD3.0S B B1 B2 RD3.3S B B1 B2 RD3.6S B B1 B2 RD3.9S B B1 B2 RD4.3S B B1 B2 B3 RD4.7S B B1 B2 B3 RD5.1S B B1 B2 B3 RD5.6S B B1 B2 B3 RD6.2S B B1 B2 B3 1.90 2.10 2.30 2.50 2.50 2.65 2.80 2.80 2.95 3.10 3.10 3.25 3.40 3.40 3.55 3.70 3.70 3.87 4.00 4.00 4.14 4.27 4.40 4.40 4.53 4.67 4.82 4.82 4.96 5.12 5.29 5.29 5.47 5.65 5.84 5.84 6.04 6.24 MAX. 2.20 2.40 2.60 2.90 2.75 2.90 3.20 3.05 3.20 3.50 3.35 3.50 3.80 3.65 3.80 4.10 3.97 4.10 4.49 4.22 4.35 4.49 4.92 4.63 4.77 4.92 5.39 5.06 5.22 5.39 5.94 5.57 5.75 5.94 6.55 6.14 6.35 6.55 5 50 5 2 3.0 5 80 5 5 2.5 5 130 5 5 1.5 5 130 5 10 1.0 5 130 5 10 1.0 5 130 5 10 1.0 5 130 5 10 1.0 5 130 5 20 1.0 5 120 5 50 1.0 Iz (mA) 5 5 5 5 Dynamic Impedance Zz ()Note 2 MAX. 100 100 100 110 Iz (mA) 5 5 5 5 Reverse Current IR (A) MAX. 120 120 120 120 VR (V) 0.5 0.7 1.0 1.0 2 Data Sheet D11444EJ3V0DS00 RD2.0S to RD120S ELECTRICAL CHARACTERISTICS (TA = 25 2 C) Type Number Class Zener Voltage Vz (V)Note 1 MIN. RD6.8S B B1 B2 B3 RD7.5S B B1 B2 B3 RD8.2S B B1 B2 B3 RD9.1S B B1 B2 B3 RD10S B B1 B2 B3 RD11S B B1 B2 B3 RD12S B B1 B2 B3 RD13S RD15S RD16S RD18S RD20S RD22S RD24S RD27S RD30S RD33S RD36S B B B B B B B B B B B 6.44 6.44 6.62 6.83 7.03 7.03 7.25 7.49 7.73 7.73 7.98 8.25 8.53 8.53 8.81 9.12 9.42 9.42 9.74 10.08 10.40 10.40 10.72 11.06 11.38 11.38 11.69 12.04 12.43 13.80 15.31 16.89 18.80 20.81 22.86 25.10 28.00 31.00 34.00 MAX. 7.17 6.76 6.96 7.17 7.87 7.39 7.63 7.87 8.67 8.13 8.39 8.67 9.58 8.96 9.26 9.58 10.58 9.90 10.24 10.58 11.60 10.92 11.26 11.60 12.64 11.94 12.28 12.64 14.00 15.56 17.14 19.08 21.14 23.25 25.66 28.90 32.00 35.00 38.00 5 5 5 5 5 5 5 2 2 2 2 35 40 40 45 50 55 60 70 80 80 90 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 10 11 12 13 15 17 19 21 23 25 27 5 35 5 2 9.0 5 30 5 2 8.0 5 30 5 2 7.0 5 30 5 2 6.0 5 30 5 2 5.0 5 30 5 2 4.0 Iz (mA) 5 Dynamic Impedance Zz ()Note 2 MAX. 30 Iz (mA) 5 Reverse Current IR (A) MAX. 2 VR (V) 3.5 Data Sheet D11444EJ3V0DS00 3 RD2.0S to RD120S ELECTRICAL CHARACTERISTICS (TA = 25 2 C) Type Number Class Zener Voltage Vz (V)Note 1 MIN. RD39S RD43S RD47S RD51S RD56S RD62S RD68S RD75S RD82S RD91S RD100S RD110S RD120S B B B B B B B B B B B B B 37.00 40.00 44.00 48.00 53.00 58.00 64.00 70.00 77.00 85.00 94.00 104.0 114.0 MAX. 41.00 45.00 49.00 54.00 60.00 66.00 72.00 79.00 87.00 96.00 106.0 116.0 126.0 Iz (mA) 2 2 2 2 2 2 2 2 2 1 1 1 1 Dynamic Impedance Zz ()Note 2 MAX. 100 130 150 180 180 200 250 300 300 700 700 800 900 Iz (mA) 2 2 2 2 2 2 2 2 2 1 1 1 1 Reverse Current IR (A) MAX. 2 2 2 1 1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VR (V) 30 33 36 39 43 47 52 57 63 69 76 84 91 Note 1. Vz is tested with pulsed (40 ms). 2. Zz is measured at Iz by given a very small A.C. current signal. 4 Data Sheet D11444EJ3V0DS00 RD2.0S to RD120S TYPICAL CHARACTERISTICS (TA = 25 C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 P - Power Dissipation - mW 200 30x30x1.6 P. C. B. (Glass Epoxy) 150 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - C Fig. 2 ZENER CURRENT vs. ZENER VOLTAGE RD2.2S RD2.0S RD2.4S 100 m RD2.7S RD3.0S RD3.3S 10 m RD3.6S RD3.9S 1m IZ - Zener Current - A Fig. 3 ZENER CURRENT vs. ZENER VOLTAGE RD6.8S RD7.5S RD8.2S RD9.1S TA = 25 C TYP. 100 m RD10S RD11S RD12S RD13S 10 m 1m IZ - Zener Current - A 100 100 10 10 1 1 100 n RD4.3S RD4.7S RD5.1S RD5.6S 10 n RD6.2S 1n 0 1 2 3 4 5 6 7 VZ - Zener Voltage - V 8 9 10 100 n 10 n 1n 0 7 8 9 10 11 12 13 14 15 Vz - Zener Voltage - V Data Sheet D11444EJ3V0DS00 5 RD2.0S to RD120S Fig. 4 ZENER CURRENT vs. ZENER VOLTAGE Fig. 5 ZENER CURRENT vs. ZENER VOLTAGE TA = 25 C TYP 100 m RD15S 10 m RD16S RD18S RD20S TA = 25 C TYP 100 m RD22S 10 m RD27S RD30S RD24S 1m Iz - Zener Current - A 1m Iz - Zener Current - A 100 100 10 10 1 1 100 n 100 n 10 n 10 n 1n 0 12 13 14 15 16 17 18 19 20 Vz - Zener Voltage - V 1n 0 16 18 20 22 24 26 28 30 32 Vz - Zener Voltage - V Fig. 6 ZENER CURRENT vs. ZENER VOLTAGE Fig. 7 ZENER CURRENT vs. ZENER VOLTAGE TA = 25 C TYP 100 m RD33S RD36S RD39S 1m Iz - Zener Current - A Iz - Zener Current - A TA = 25 C TYP 100 m RD68S RD62S RD82S RD91S RD47S RD75S RD100S 10 m RD110S RD43S RD120S RD56S 1m 10 m 100 100 10 10 1 1 100 n 100 n 10 n 10 n 1n 1n 0 25 30 35 Vz - Zener Voltage - V 40 Data Sheet D11444EJ3V0DS00 0 30 60 90 120 6 Vz - Zener Voltage - V RD2.0S to RD120S Fig. 8 DYNAMIC IMPEDANCE vs. ZENER CURRENT 1000 ZZ - Zener Impedance - 100 RD5.6S RD39S RD24S RD20S RD15S RD10S 10 RD7.5S RD2.0S RD2.4S RD3.0S RD3.9S RD4.7S RD5.1S 1 0.1 1 10 100 IZ - Zener Current - mA Fig. 9 ZENER VOLTAGE TEMPERATURE COEFFICIENT vs. ZENER VOLTAGE Fig. 10 ZENER VOLTAGE TEMPERATURE COEFFICIENT vs. ZENER VOLTAGE Z - VZ Temperature Coefficient - mV/C Z - VZ Temperature Coefficient - %/C 0.12 0.11 0.10 0.09 TYP. 140 120 %/C 100 80 mV/C 60 40 20 0.1 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 0 4 8 12 16 20 RD2.0S to RD39S 24 28 32 36 %mV/C %V/C 40 32 24 16 8 0 -8 -16 -24 40 0.08 0.07 RD43S to RD120S 0 40 50 60 70 80 90 100 110 120 VZ - Zener Voltage - V Vz - Zener Voltage - V Data Sheet D11444EJ3V0DS00 Z - Zener Voltage Temperature Coefficient - mV/ C 7 Z - Zener Voltage Temperature Coefficient - % / C RD2.0S to RD120S Fig. 11 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 5000 Zth - Transient Thermal Impedance -C 1000 RD[ ]S 100 P.C.B (Glass Epoxy) 10 5 1m (30mm x 30mm x 1.6mm) 10m 100m 1 10 100 t - Time - s Fig. 12 SURGE REVERSE POWER RATINGS 1 000 TA = 25 C Repetitive PRSM - Surge Reverse Power - W PRSM tT 100 10 1 1 10 100 1m 10 m 100 m tT - Pulse Width - s 8 Data Sheet D11444EJ3V0DS00 RD2.0S to RD120S [MEMO] Data Sheet D11444EJ3V0DS00 9 RD2.0S to RD120S [MEMO] 10 Data Sheet D11444EJ3V0DS00 RD2.0S to RD120S [MEMO] Data Sheet D11444EJ3V0DS00 11 RD2.0S to RD120S [MEMO] * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98.8 |
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